Aluminum nitride (AlN) has ultra-high thermal conductivity, excellent electrical insulation, low dielectric loss, thermal expansion coefficient close to silicon, and excellent plasma resistance.

Aluminum Nitride is one of a few materials which has both high thermal conductivity and electrical insulation. This unique feature, combined with its low toxicity compared with beryllium oxide (BeO), makes AIN ideal for managing rapid heating and removal of heat from other components and systems, such as in heat sinks and spreaders.

In addition, as mentioned above AlN has low coefficient of thermal expansion close to silicon material, means AlN can be used for semiconductor processing equipment components.


  • High thermal conductivity combined with good electrical insulation
  • Low coefficient of thermal expansion
  • Low dielectric constant
  • High mechanical strength
  • Corrosion resistant against normal semiconductor process chemicals and gases
  • Good thermal shock resistance


  • Microwave device packages
  • Heat sinks
  • LED lighting
  • Substrates for electronics & semiconductors
  • Semiconductor processing chamber fixtures and insulators


Aluminum Nitride Properties

  TecAN-170 TecAN-210
Color Grey/Translucent Grey Grey/Beige
Bulk Density g/cm3 3.32 3.33
Apparent Porosity % 0 0
Flexural Strength MPa 400 300
Hardness GPa 10 9
Young’s Modulus of Elasticity GPa 320 320
Poisson’s Ratio 0.24 0.24
Thermal Expansion 20 – 1000°C, 10-6 K-1 4.8 4.6
Thermal Conductivity (25°C) W/m°K 170 210
Dielectric Constant 1 MHz 8.8 8.9
Dielectric Strength kV/mm 31 27

Products Made From AlN