Introduction
Aluminum nitride has properties of high thermal conductivity of 170 W/mK, excellent dielectric properties, and a low thermal expansion similar to silicon. ALN substrate is used for mainly semiconductor manufacturing devices, and also it can be used for vacuum evaporation system, sputtering machines and CVD devices.
Aluminum nitride substrates are produced by Tech Ceramic in different processes, tape casting or dry pressing. Substrates’ thickness produced by tape casting is up to 1.5mm while by dry pressing thickness is up to 6.35mm.
Our substrates are supplied ready to use or can be further processed, including mechanical dicing, laser scribing and cutting, thick film metallizing, thin film metallizing, DPC, DBC, TPC, AMB.
Substrate Sizes
| Thickness (inch) | Square Substrates Width x Length | |||||||
| 2"x2" | 3"x3" | 4"x4" | 4.5"x4.5" | 5"x5" | 5.5"x7.5" | 6"x6" | 6.5"x6.5" | |
| .006" | √ | √ | √ | √ | - | - | - | - |
| .001" | √ | √ | √ | √ | - | - | - | - |
| .015" | √ | √ | √ | √ | √ | - | - | - |
| .020" | √ | √ | √ | √ | √ | √ | √ | √ |
| .025" | √ | √ | √ | √ | √ | √ | √ | √ |
| .040" | √ | √ | √ | √ | √ | √ | √ | √ |
| .060" | √ | √ | √ | √ | √ | √ | √ | √ |
| .070"-.25" | √ | √ | √ | √ | √ | √ | √ | √ |
The surface conditons are as fired or lapped as per client's requirement
Tolerance
| Thickness | +/-7%, NLT .002" |
| Length & Width | +.004" -.002" |
| Camber | ≤.002"/inch |
Scribing to scribing |
+/- .002" |
| Hole | φ.008"~.07" (+/- .002") φ.07"~0.4" (+/- .004") 0.4"~ (+/- .006") |
| Center to center distance of holes | +/- .002" |
| Surface | .001-.002 μm Ra |
AlN Property
| TecAN-170 | TecAN-210 | |
| Color | Grey/Translucent Grey | Grey/Beige |
| Bulk Density g/cm3 | 3.32 | 3.33 |
| Apparent Porosity % | 0 | 0 |
| Flexural Strength MPa | 400 | 300 |
| Hardness GPa | 10 | 9 |
| Young’s Modulus of Elasticity GPa | 320 | 320 |
| Poisson’s Ratio | 0.24 | 0.24 |
| Thermal Expansion 20 – 1000°C, 10-6 K-1 | 4.8 | 4.6 |
| Thermal Conductivity (25°C) W/m°K | 170 | 210 |
| Dielectric Constant 1 MHz | 8.8 | 8.9 |
| Dielectric Strength kV/mm | 31 | 27 |
